Junction Field-Effect Devices
The first field-effect devices were proposed by J.E. Lilienfeld in 1926 and O. Heil in 1935 corresponding to a Schottky-gate device and a MOSFET, respectively. The principle of the junction field-effect transistor (JFET) was discovered by Shockley in 1952 and realized as a practical device by Dacey and Ross in 1953. Some years before, in 1950, Nishizawa and Watanabe had applied for a patent for a similar device, which they called the “electrostatic induction transistor” (SIT). The feasibility of this device, however, could be demonstrated only in 1970 by Nishizawa, Terasaki and Shibata. The fundamental idea of the SIT in 1950 was to control a resistance by means of carrier injection into a high resistivity layer using electrostatic induction. Subsequently the term “field effect” was introduced for the same phenomenon and has become widely accepted, leading to some confusion in terminology.
KeywordsBarrier Height Gate Voltage Drain Current Drain Voltage Gate Structure
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