Go to ScienceDirect® Home Skip Main Navigation Links
You have guest access to ScienceDirect. Find out more.
 
Home
Browse
My Settings
Alerts
Help
 Quick Search   Title, abstract, keywords   Author e.g.  j s smith
 Search tips (Opens new window)   Journal/book title   Volume   Issue   Page     Clear all fields    

Journal of Crystal Growth
Volume 298, January 2007, Pages 172-175
Thirteenth International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE XIII)
Result list |  previous  < 1 of 12 >  next 

Abstract Full Text + Links PDF (451 K)
Add to my quick links    E-mail article   
Purchase the full-text article
Related Articles in ScienceDirect
View More Related Articles
Bookmark and share in 2collab (opens in new window)
Request permission to reuse this article
View Record in Scopus
Cited By in Scopus (0)

doi:10.1016/j.jcrysgro.2006.10.194    How to Cite or Link Using DOI (Opens New Window)  
Copyright © 2006 Elsevier B.V. All rights reserved.

Safer alternative liquid germanium precursors for relaxed graded SiGe layers and strained silicon by MOVPE

Deo V. ShenaiCorresponding Author Contact Information, a, E-mail The Corresponding Author, Ronald L. DiCarlo, Jra, Michael B. Powera, Artashes Amamchyana, Randall J. Goyettea and Egbert Woelka
aRohm and Haas Electronic Materials LLC, Microelectronic Technologies, Metalorganics, 60 Willow Street, North Andover, MA 01845, USA

Available online 8 January 2007.

Abstract

Commercial strategy to graded SiGe buffer layers and “strained silicon” involves passing germane (GeH4) gas or germanium tetrachloride (GeCl4) vapors as the preferred germanium sources, along with a silicon source over a heated substrate. Today, one of the major limitations impacting the commercialization of SiGe technology is the lack of a commercially viable and safer process that eliminates hazards associated with GeH4 and the excessively higher thermal budget associated with GeCl4. The key to growing successful SiGe structures is thus a strategic deposition process that employs safer alternative germanium sources, and allows a wide growth temperature window without degrading the film properties and jeopardizing the environment, health and safety (EHS) aspects of overall operation. In this paper, we report on the development of safer alternative liquid germanium precursors along with the first successful use of a new organo germanium precursor, iso-butyl germane (IBGe) for the growth of high purity Ge and SiGe films. We also detail our strategy to identify the most appropriate candidates from a large number of organo germanium compounds along with initial results on SiGe films and high-quality epitaxial Ge films deposited using IBGe.


Keywords: A1. Characterization; A3. Metalorganic vapor-phase epitaxy; A3. Organometallic vapor-phase epitaxy; B1. Organo germanium compounds; B2. Semiconducting gallium arsenide; B2. Semiconducting germanium

PACS classification codes: 81.10.Bk; 81.15.Gh



Corresponding Author Contact InformationCorresponding author. Fax: +1 978 557 1719.


Journal of Crystal Growth
Volume 298, January 2007, Pages 172-175
Thirteenth International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE XIII)
Result list |  previous  < 1 of 12 >  next 
 
Home
Browse
My Settings
Alerts
Help
Elsevier.com (Opens new window)
About ScienceDirect  |  Contact Us  |  Terms & Conditions  |  Privacy Policy
Copyright © 2008 Elsevier B.V. All rights reserved. ScienceDirect® is a registered trademark of Elsevier B.V.